{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495297","patent":{"patent_number":"US-11495297","title":"Semiconductor device and reading method thereof","assignee":null,"inventors":[],"filing_date":"2021-05-26T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":18,"abstract":"A semiconductor device that can compensate for threshold fluctuations in memory cells using capacitive coupling. The flash memory includes a NAND-type memory cell array, a programing device, a reading device, and an offset voltage determining unit. The programing device programs the memory cells connected to a selected word line. The reading device reads the memory cells connected to a selected word line. The programing device programs the memory cells of a monitoring NAND string simultaneously when programing a word line. The reading device comprises a current detecting unit applying a read voltage to an unselected word line n+1, and detecting the current of the monitoring NAND string. The offset voltage determining unit determines the first and second offset voltage based on the detected current, and a reading pass voltage is applied to the unselected word line, a read voltage is applied to the selected word line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and reading method thereof","description":"A semiconductor device that can compensate for threshold fluctuations in memory cells using capacitive coupling. The flash memory includes a NAND-type memory cell array, a programing device, a reading","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495297","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495297","citation_suggestion":"Patentable. \"Semiconductor device and reading method thereof\" (US-11495297). https://patentable.app/patents/US-11495297","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495297","json":"https://patentable.app/api/llm-context/US-11495297","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:23:56.559Z"}