{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495312","patent":{"patent_number":"US-11495312","title":"Memory circuit and memory programming method","assignee":null,"inventors":[],"filing_date":"2021-05-20T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":11,"abstract":"A memory circuit and a memory programming method adapted to program flash memory are provided. The memory circuit includes a charge pumping circuit, a voltage regulator, a voltage sensor, and a plurality of switch circuits. The charge pumping circuit generates a pumping voltage and a pumping current. The voltage regulator is coupled to the charge pumping circuit and generates a programming voltage and a programming current to program the flash memory according to the pumping voltage and the pumping current. The voltage sensor is coupled to the voltage regulator to monitor a voltage value of the programming voltage. Each of the plurality of switch circuits includes a first terminal coupled to the voltage sensor and a second terminal coupled to the flash memory. A quantity of the plurality of switch circuits that are turned on is determined by the voltage value of the programming voltage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory circuit and memory programming method","description":"A memory circuit and a memory programming method adapted to program flash memory are provided. The memory circuit includes a charge pumping circuit, a voltage regulator, a voltage sensor, and a plural","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495312","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495312","citation_suggestion":"Patentable. \"Memory circuit and memory programming method\" (US-11495312). https://patentable.app/patents/US-11495312","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495312","json":"https://patentable.app/api/llm-context/US-11495312","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:48:03.677Z"}