{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495460","patent":{"patent_number":"US-11495460","title":"Method for forming semiconductor structure by patterning resist layer having inorganic material","assignee":null,"inventors":[],"filing_date":"2020-08-06T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate, and forming a first layer over the material layer. The method also includes forming a second layer over the first layer, and the second layer includes an auxiliary. The method further includes forming a third layer over the second layer, and the third layer includes an inorganic material, the inorganic material includes a plurality of metallic cores, and a plurality of first linkers bonded to the metallic cores. A topmost surface of the second layer is in direct contact with a bottommost surface of the third layer. The method includes exposing a portion of the second layer by performing an exposure process, and the auxiliary reacts with the first linkers during the exposure process."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming semiconductor structure by patterning resist layer having inorganic material","description":"A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate, and forming a first layer over the material layer. The method also inc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495460","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495460","citation_suggestion":"Patentable. \"Method for forming semiconductor structure by patterning resist layer having inorganic material\" (US-11495460). https://patentable.app/patents/US-11495460","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495460","json":"https://patentable.app/api/llm-context/US-11495460","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:10:20.555Z"}