{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495470","patent":{"patent_number":"US-11495470","title":"Method of enhancing etching selectivity using a pulsed plasma","assignee":null,"inventors":[],"filing_date":"2021-04-29T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":17,"abstract":"Embodiments of this disclosure include a method of processing a substrate that includes etching a first dielectric material formed on a substrate that is disposed on a substrate supporting surface of a substrate support assembly disposed within a processing region of a plasma processing chamber. The etching process may include delivering a process gas to the processing region, wherein the process gas comprises a first fluorocarbon containing gas and a first process gas, delivering, by use of a radio frequency generator, a radio frequency signal to a first electrode to form a plasma in the processing region, and establishing, by use of a first pulsed-voltage waveform generator, a first pulsed voltage waveform at a biasing electrode disposed within the substrate support assembly. The first pulsed voltage waveform comprises a series of repeating pulsed waveform cycles that each include a first portion that occurs during a first time interval, a second portion that occurs during a second time interval, and a peak-to-peak voltage. The pulsed voltage waveform is substantially constant during at least a portion of the second time interval."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of enhancing etching selectivity using a pulsed plasma","description":"Embodiments of this disclosure include a method of processing a substrate that includes etching a first dielectric material formed on a substrate that is disposed on a substrate supporting surface of ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495470","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495470","citation_suggestion":"Patentable. \"Method of enhancing etching selectivity using a pulsed plasma\" (US-11495470). https://patentable.app/patents/US-11495470","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495470","json":"https://patentable.app/api/llm-context/US-11495470","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:44:15.860Z"}