{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495488","patent":{"patent_number":"US-11495488","title":"Method for manufacturing bonded SOI wafer and bonded SOI wafer","assignee":null,"inventors":[],"filing_date":"2019-05-14T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A method for manufacturing a bonded SOI wafer, the method using a silicon single crystal wafer having a resistivity of 100 Ω·cm or more as the base wafer, and including steps of: forming an underlying insulator film on a bonding surface side of the base wafer; depositing a polycrystalline silicon layer on a surface of the underlying insulator film; polishing a surface of the polycrystalline silicon layer; modifying the polycrystalline silicon layer by performing ion implantation on the polished polycrystalline silicon layer to form a modified silicon layer; forming the insulator film on a bonding surface of the bond wafer; bonding the bond wafer and a surface of the modified silicon layer of the base wafer with the insulator film interposed therebetween; and thinning the bonded bond wafer to form an SOI layer. This provides a bonded SOI wafer excellent in harmonic wave characteristics."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing bonded SOI wafer and bonded SOI wafer","description":"A method for manufacturing a bonded SOI wafer, the method using a silicon single crystal wafer having a resistivity of 100 Ω·cm or more as the base wafer, and including steps of: forming an underlying","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495488","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495488","citation_suggestion":"Patentable. \"Method for manufacturing bonded SOI wafer and bonded SOI wafer\" (US-11495488). https://patentable.app/patents/US-11495488","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495488","json":"https://patentable.app/api/llm-context/US-11495488","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:42:08.442Z"}