{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495491","patent":{"patent_number":"US-11495491","title":"Structure and formation method of semiconductor device with stacked conductive structures","assignee":null,"inventors":[],"filing_date":"2020-01-16T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a first conductive structure over the semiconductor substrate. The semiconductor device structure also includes a first dielectric layer surrounding the first conductive structure and a second dielectric layer over the first dielectric layer. The semiconductor device structure further includes a second conductive structure partially surrounded by the second dielectric layer and partially surrounded by the first conductive structure. In addition, the semiconductor device structure includes an interfacial layer separating the first conductive structure from the second conductive structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure and formation method of semiconductor device with stacked conductive structures","description":"A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a first conductive st","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495491","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495491","citation_suggestion":"Patentable. \"Structure and formation method of semiconductor device with stacked conductive structures\" (US-11495491). https://patentable.app/patents/US-11495491","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495491","json":"https://patentable.app/api/llm-context/US-11495491","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:15:51.979Z"}