{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495492","patent":{"patent_number":"US-11495492","title":"Method of fabricating semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-09-09T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"Provided is a method for manufacturing a semiconductor device, including: forming a conductive layer on the first dielectric layer; forming a recess in the conductive layer; performing a first etching process to round a top corner of the recess; performing a second etching process to remove the conductive layer exposed from a bottom surface of the recess and thereby forming an opening having a rounding top corner in the conductive layer; and forming a second dielectric layer in the opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating semiconductor device","description":"Provided is a method for manufacturing a semiconductor device, including: forming a conductive layer on the first dielectric layer; forming a recess in the conductive layer; performing a first etching","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495492","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495492","citation_suggestion":"Patentable. \"Method of fabricating semiconductor device\" (US-11495492). https://patentable.app/patents/US-11495492","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495492","json":"https://patentable.app/api/llm-context/US-11495492","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:33:56.580Z"}