{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495537","patent":{"patent_number":"US-11495537","title":"Interconnect structure in semiconductor devices","assignee":null,"inventors":[],"filing_date":"2020-04-13T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes transistors over a substrate, and first, second, and third metallization layers over the transistors. The first, second, and third metallization layer includes first, second, and third metal features, respectively. The second metal features are oriented lengthwise substantially perpendicular to the first metal features, and the third metal features are oriented lengthwise substantially parallel to the first metal features. The first, second, and third metal features have a first, second, and third thickness, respectively, along a first direction perpendicular to a top surface of the substrate. The second thickness is smaller than both the first and the third thicknesses."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Interconnect structure in semiconductor devices","description":"A semiconductor device includes transistors over a substrate, and first, second, and third metallization layers over the transistors. The first, second, and third metallization layer includes first, s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495537","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495537","citation_suggestion":"Patentable. \"Interconnect structure in semiconductor devices\" (US-11495537). https://patentable.app/patents/US-11495537","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495537","json":"https://patentable.app/api/llm-context/US-11495537","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:18:25.672Z"}