{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495542","patent":{"patent_number":"US-11495542","title":"Semiconductor memory device and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2020-05-15T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor memory includes electrode structures that each includes horizontal electrodes stacked on each other a substrate, vertical electrodes between the electrode structures and extending along the horizontal electrodes, first contacts connected to the horizontal electrodes at end portions of the electrode structures, second contacts connected to upper portions of the vertical electrodes, and a first interconnection structure connected to top surfaces of the second contacts. The first interconnection structure includes first and second sub-interconnection lines. The sub-interconnection lines extend in a first direction and contact the top surfaces of the second contacts. The second sub-interconnection lines extended in a second direction crossing the first direction and contact the first sub-interconnection lines."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device and method of fabricating the same","description":"A semiconductor memory includes electrode structures that each includes horizontal electrodes stacked on each other a substrate, vertical electrodes between the electrode structures and extending alon","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495542","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495542","citation_suggestion":"Patentable. \"Semiconductor memory device and method of fabricating the same\" (US-11495542). https://patentable.app/patents/US-11495542","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495542","json":"https://patentable.app/api/llm-context/US-11495542","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:55:37.884Z"}