{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495593","patent":{"patent_number":"US-11495593","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-10-30T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor device includes a composite pn-junction structure in a semiconductor substrate, wherein the composite pn-junction structure has a first junction grading coefficient m1, with m1≥0.50. The composite pn-junction structure includes a first partial pn-junction structure and a second partial pn-junction structure, wherein the first partial pn-junction structure has a first partial junction grading coefficient m11, and wherein the second partial pn-junction structure has a second partial junction grading coefficient m12. The first partial junction grading coefficient m11 is different to the second partial junction grading coefficient m12, with m11≠m12. At least one of the first and second partial junction grading coefficients m11, m12 is greater than 0.50, with m11 and/or m12>0.50. The first junction grading coefficient m1 of the composite pn-junction structure is based on a combination of the first and second partial junction grading coefficients m11, m12."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A semiconductor device includes a composite pn-junction structure in a semiconductor substrate, wherein the composite pn-junction structure has a first junction grading coefficient m1, with m1≥0.50. T","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495593","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495593","citation_suggestion":"Patentable. \"Semiconductor device\" (US-11495593). https://patentable.app/patents/US-11495593","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495593","json":"https://patentable.app/api/llm-context/US-11495593","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:00:30.701Z"}