{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495613","patent":{"patent_number":"US-11495613","title":"Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same","assignee":null,"inventors":[],"filing_date":"2020-08-04T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":18,"abstract":"A memory device can include a strained single-crystalline silicon layer and an alternating stack of insulating layers and electrically conductive layers located over the strained single-crystalline silicon layer. A memory opening fill structure extending through the alternating stack may include an epitaxial silicon-containing pedestal channel portion, and a vertical semiconductor channel, and a vertical stack of memory elements located adjacent to the vertical semiconductor channel Additionally or alternatively, a drain region can include a semiconductor drain portion and a nickel-aluminum-semiconductor alloy drain portion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same","description":"A memory device can include a strained single-crystalline silicon layer and an alternating stack of insulating layers and electrically conductive layers located over the strained single-crystalline si","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495613","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495613","citation_suggestion":"Patentable. \"Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same\" (US-11495613). https://patentable.app/patents/US-11495613","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495613","json":"https://patentable.app/api/llm-context/US-11495613","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:44:14.045Z"}