{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495630","patent":{"patent_number":"US-11495630","title":"Multiple deep trench isolation (MDTI) structure for CMOS image sensor","assignee":null,"inventors":[],"filing_date":"2020-07-09T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["H04N","H04N","H04N"],"num_claims":20,"abstract":"The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a plurality of pixel regions disposed within a substrate and respectively comprising a photodiode configured to receive radiation that enters the substrate from a back-side. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions surrounding the photodiode. The BDTI structure extends from the back-side of the substrate to a first depth within the substrate. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel regions overlying the photodiode. The MDTI structure extends from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure is a continuous integral unit having a ring shape."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multiple deep trench isolation (MDTI) structure for CMOS image sensor","description":"The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495630","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495630","citation_suggestion":"Patentable. \"Multiple deep trench isolation (MDTI) structure for CMOS image sensor\" (US-11495630). https://patentable.app/patents/US-11495630","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495630","json":"https://patentable.app/api/llm-context/US-11495630","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:24:59.733Z"}