{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495668","patent":{"patent_number":"US-11495668","title":"Full air-gap spacers for gate-all-around nanosheet field effect transistors","assignee":null,"inventors":[],"filing_date":"2019-12-04T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"Semiconductor devices and method of forming the same include recessing sacrificial layers relative to the channel layers, in a stack of vertically aligned, alternating sacrificial layers and channel layers, to form first recesses. A dual-layer dielectric is deposited that includes a first dielectric material formed conformally on surfaces of the recesses and a second dielectric material filling a remainder of the first recesses. The first dielectric material is recessed relative to the second dielectric material to form second recesses. Additional second dielectric material is deposited to fill the second recesses. The second dielectric material and the additional second dielectric material is etched away to create air gaps."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Full air-gap spacers for gate-all-around nanosheet field effect transistors","description":"Semiconductor devices and method of forming the same include recessing sacrificial layers relative to the channel layers, in a stack of vertically aligned, alternating sacrificial layers and channel l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495668","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495668","citation_suggestion":"Patentable. \"Full air-gap spacers for gate-all-around nanosheet field effect transistors\" (US-11495668). https://patentable.app/patents/US-11495668","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495668","json":"https://patentable.app/api/llm-context/US-11495668","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:15:59.995Z"}