{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495669","patent":{"patent_number":"US-11495669","title":"Full air-gap spacers for gate-all-around nanosheet field effect transistors","assignee":null,"inventors":[],"filing_date":"2019-12-04T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Semiconductor devices include a stack of vertically arranged channel layers. A gate stack is formed above, between, and around the vertically arranged channel layers. Source and drain regions and source and drain conductive contacts are formed. Inner spacers are formed between the vertically arranged channel layers, each having an inner air gap and a recessed layer formed from a first dielectric material. Outer spacers are formed between the gate stack and the source and drain conductive contacts, each having a second dielectric material that is pinched off to form an outer air gap."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Full air-gap spacers for gate-all-around nanosheet field effect transistors","description":"Semiconductor devices include a stack of vertically arranged channel layers. A gate stack is formed above, between, and around the vertically arranged channel layers. Source and drain regions and sour","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495669","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495669","citation_suggestion":"Patentable. \"Full air-gap spacers for gate-all-around nanosheet field effect transistors\" (US-11495669). https://patentable.app/patents/US-11495669","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495669","json":"https://patentable.app/api/llm-context/US-11495669","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:44:32.544Z"}