{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495675","patent":{"patent_number":"US-11495675","title":"Manufacture method of lateral double-diffused transistor","assignee":null,"inventors":[],"filing_date":"2021-07-14T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":15,"abstract":"The present disclosure provides a manufacture method of an LDMOS. The manufacture method includes: forming a drift region in a substrate; forming a gate structure on the substrate, the gate structure defining a source region and a drain region which are separated from each other, and the gate structure including a gate oxide layer and a gate conductor layer which are successively stacked on the substrate; forming a first doped region in the source region, wherein the first doped region is surrounded by the drift region; forming a first barrier layer with a first opening on the source region and in connect with sidewall of the gate structure; forming a first implantation region in the source region through self-aligned implantation on the basis of the first opening of the first barrier layer; and forming a second implantation region and a third implantation region respectively."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacture method of lateral double-diffused transistor","description":"The present disclosure provides a manufacture method of an LDMOS. The manufacture method includes: forming a drift region in a substrate; forming a gate structure on the substrate, the gate structure ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495675","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495675","citation_suggestion":"Patentable. \"Manufacture method of lateral double-diffused transistor\" (US-11495675). https://patentable.app/patents/US-11495675","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495675","json":"https://patentable.app/api/llm-context/US-11495675","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:51:09.351Z"}