{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495682","patent":{"patent_number":"US-11495682","title":"Semiconductor device and method","assignee":null,"inventors":[],"filing_date":"2020-02-27T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Nanostructure field-effect transistors (NSFETs) including isolation layers formed between epitaxial source/drain regions and semiconductor substrates and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate; a gate stack over the semiconductor substrate, the gate stack including a gate electrode and a gate dielectric layer; a first epitaxial source/drain region adjacent the gate stack; and a high-k dielectric layer extending between the semiconductor substrate and the first epitaxial source/drain region, the high-k dielectric layer contacting the first epitaxial source/drain region, the gate dielectric layer and the high-k dielectric layer including the same material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method","description":"Nanostructure field-effect transistors (NSFETs) including isolation layers formed between epitaxial source/drain regions and semiconductor substrates and methods of forming the same are disclosed. In ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495682","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495682","citation_suggestion":"Patentable. \"Semiconductor device and method\" (US-11495682). https://patentable.app/patents/US-11495682","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495682","json":"https://patentable.app/api/llm-context/US-11495682","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:46:36.347Z"}