{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495683","patent":{"patent_number":"US-11495683","title":"Multiple strain states in epitaxial transistor channel through the incorporation of stress-relief defects within an underlying seed material","assignee":null,"inventors":[],"filing_date":"2020-02-19T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":23,"abstract":"Multiple strain states in epitaxial transistor channel material may be achieved through the incorporation of stress-relief defects within a seed material. Selective application of strain may improve channel mobility of one carrier type without hindering channel mobility of the other carrier type. A transistor structure may have a heteroepitaxial fin including a first layer of crystalline material directly on a second layer of crystalline material. Within the second layer, a number of defected regions of a threshold minimum dimension are present, which induces the first layer of crystalline material to relax into a lower-strain state. The defected regions may be introduced selectively, for example a through a masked impurity implantation, so that the defected regions may be absent in some transistor structures where a higher-strain state in the first layer of crystalline material is desired."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multiple strain states in epitaxial transistor channel through the incorporation of stress-relief defects within an underlying seed material","description":"Multiple strain states in epitaxial transistor channel material may be achieved through the incorporation of stress-relief defects within a seed material. Selective application of strain may improve c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495683","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495683","citation_suggestion":"Patentable. \"Multiple strain states in epitaxial transistor channel through the incorporation of stress-relief defects within an underlying seed material\" (US-11495683). https://patentable.app/patents/US-11495683","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495683","json":"https://patentable.app/api/llm-context/US-11495683","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:30:01.721Z"}