{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495693","patent":{"patent_number":"US-11495693","title":"Semiconductor memory device and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2021-01-27T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"A semiconductor memory device includes a substrate having a first active area and a second active area in proximity to the first active area. A trench isolation region is between the first active area and the second active area. A source line region is disposed in the first active area and adjacent to the trench isolation region. An erase gate is disposed on the source line region. A floating gate is disposed on a first side of the erase gate. A first control gate is disposed on the floating gate. A first word line is disposed adjacent to the floating gate and the first control gate and insulated therefrom. A second control gate is disposed on a second side of the erase gate and directly on the trench isolation region. A second word line is disposed adjacent to the second control gate and insulated therefrom."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device and fabrication method thereof","description":"A semiconductor memory device includes a substrate having a first active area and a second active area in proximity to the first active area. A trench isolation region is between the first active area","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495693","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495693","citation_suggestion":"Patentable. \"Semiconductor memory device and fabrication method thereof\" (US-11495693). https://patentable.app/patents/US-11495693","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495693","json":"https://patentable.app/api/llm-context/US-11495693","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:13:24.589Z"}