{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495734","patent":{"patent_number":"US-11495734","title":"Method of manufacture for single crystal capacitor dielectric for a resonance circuit","assignee":null,"inventors":[],"filing_date":"2019-11-22T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":7,"abstract":"A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacture for single crystal capacitor dielectric for a resonance circuit","description":"A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thic","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495734","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495734","citation_suggestion":"Patentable. \"Method of manufacture for single crystal capacitor dielectric for a resonance circuit\" (US-11495734). https://patentable.app/patents/US-11495734","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495734","json":"https://patentable.app/api/llm-context/US-11495734","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:42:48.333Z"}