{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11500157","patent":{"patent_number":"US-11500157","title":"Silicon Selective Epitaxial Growth (SEG) applied to a Silicon on Insulator (SOI) wafer to provide a region of customized thickness","assignee":null,"inventors":[],"filing_date":"2020-03-19T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["G02F","G02F","H01L","H01L"],"num_claims":18,"abstract":"A method of Silicon Selective Epitaxial Growth (SEG) applied to a Silicon on Insulator (SOI) wafer to provide a first region of customized thickness includes with the SOI wafer having a standard thickness, applying a hard mask to a plurality of regions of the SOI wafer including the first region; applying photo-lithography protection to cover the hard mask in all of the plurality of regions except the first region; removing the hard mask in the first region; and performing Silicon SEG in the first region to provide the customized thickness in the first region, wherein the customized thickness is greater than the standard thickness."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon Selective Epitaxial Growth (SEG) applied to a Silicon on Insulator (SOI) wafer to provide a region of customized thickness","description":"A method of Silicon Selective Epitaxial Growth (SEG) applied to a Silicon on Insulator (SOI) wafer to provide a first region of customized thickness includes with the SOI wafer having a standard thick","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11500157","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11500157","citation_suggestion":"Patentable. \"Silicon Selective Epitaxial Growth (SEG) applied to a Silicon on Insulator (SOI) wafer to provide a region of customized thickness\" (US-11500157). https://patentable.app/patents/US-11500157","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11500157","json":"https://patentable.app/api/llm-context/US-11500157","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:37:24.342Z"}