{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11500293","patent":{"patent_number":"US-11500293","title":"Patterning material film stack with hard mask layer configured to support selective deposition on patterned resist layer","assignee":null,"inventors":[],"filing_date":"2019-10-18T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor structure comprises a semiconductor substrate, and a multi-layer patterning material film stack formed on the semiconductor substrate. The patterning material film stack comprises at least a hard mask layer and a resist layer formed over the hard mask layer. The hard mask layer is configured to support selective deposition of a metal-containing layer on a developed pattern of the resist layer through inclusion in the hard mask layer of one or more materials inhibiting deposition of the metal-containing layer on portions of the hard mask layer corresponding to respective openings in the resist layer. The hard mask layer illustratively comprises, for example, at least one of a grafted self-assembled monolayer configured to inhibit deposition of the metal-containing layer, and a grafted polymer brush material configured to inhibit deposition of the metal-containing layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Patterning material film stack with hard mask layer configured to support selective deposition on patterned resist layer","description":"A semiconductor structure comprises a semiconductor substrate, and a multi-layer patterning material film stack formed on the semiconductor substrate. The patterning material film stack comprises at l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11500293","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11500293","citation_suggestion":"Patentable. \"Patterning material film stack with hard mask layer configured to support selective deposition on patterned resist layer\" (US-11500293). https://patentable.app/patents/US-11500293","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11500293","json":"https://patentable.app/api/llm-context/US-11500293","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:45:44.926Z"}