{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11501810","patent":{"patent_number":"US-11501810","title":"Amorphous spin diffusion layer for modified double magnetic tunnel junction structure","assignee":null,"inventors":[],"filing_date":"2021-03-17T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":24,"abstract":"A modified double magnetic tunnel junction structure is provided which includes an amorphous spin diffusion layer (i.e., an amorphous non-magnetic, spin-conducting metallic layer) sandwiched between a magnetic free layer and a first tunnel barrier layer; the first tunnel barrier layer contacts a first magnetic reference layer. A second tunnel barrier layer is located on the magnetic free layer and a second magnetic reference layer is located on the second tunnel barrier layer. Such a modified double magnetic tunnel junction structure exhibits efficient switching (at a low current) and speedy readout (high tunnel magnetoresistance)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Amorphous spin diffusion layer for modified double magnetic tunnel junction structure","description":"A modified double magnetic tunnel junction structure is provided which includes an amorphous spin diffusion layer (i.e., an amorphous non-magnetic, spin-conducting metallic layer) sandwiched between a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11501810","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11501810","citation_suggestion":"Patentable. \"Amorphous spin diffusion layer for modified double magnetic tunnel junction structure\" (US-11501810). https://patentable.app/patents/US-11501810","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11501810","json":"https://patentable.app/api/llm-context/US-11501810","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:15:24.133Z"}