{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11501812","patent":{"patent_number":"US-11501812","title":"Semiconductor devices including ferroelectric memory and methods of forming the same","assignee":null,"inventors":[],"filing_date":"2020-11-16T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"A semiconductor device including a capacitor, with a memory film isolating a first electrode from a contact, formed over a transistor and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a gate stack over a semiconductor substrate; a capacitor over the gate stack, the capacitor including a first electrode extending along a top surface of the gate stack, the first electrode being U-shaped; a first ferroelectric layer over the first electrode; and a second electrode over the first ferroelectric layer, a top surface of the second electrode being level with a top surface of the first ferroelectric layer, and the top surface of the first ferroelectric layer and the top surface of the second electrode being disposed further from the semiconductor substrate than a topmost surface of the first electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices including ferroelectric memory and methods of forming the same","description":"A semiconductor device including a capacitor, with a memory film isolating a first electrode from a contact, formed over a transistor and methods of forming the same are disclosed. In an embodiment, a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11501812","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11501812","citation_suggestion":"Patentable. \"Semiconductor devices including ferroelectric memory and methods of forming the same\" (US-11501812). https://patentable.app/patents/US-11501812","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11501812","json":"https://patentable.app/api/llm-context/US-11501812","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:47:26.208Z"}