{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11501974","patent":{"patent_number":"US-11501974","title":"Electrode structure of back electrode of semiconductor substrate, method for producing the same, and sputtering target for use in producing the electrode structure","assignee":null,"inventors":[],"filing_date":"2017-12-19T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":12,"abstract":"An electrode structure of a back electrode including metal layers laminated in the following order: a Ti layer, a Ni layer, and a Ag alloy layer. The Ag alloy layer includes an Ag alloy and an addition metal M selected from Sn, Sb, and Pd. The electrode structure is configured such that when subjected to elemental analysis with an X-ray photoelectron spectrometer in the depth direction from the Ag alloy layer to the Ni layer, on the boundary between the Ni layer and the Ag alloy layer, an intermediate region where spectra derived from all the metals, Ni, Ag, and the addition element M, can be detected is observable, and, when each metal content in the intermediate region is converted based on the spectra derived from all the metals Ni, Ag, and the addition element M, the maximum of the addition element M content is 5 at % or more."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Electrode structure of back electrode of semiconductor substrate, method for producing the same, and sputtering target for use in producing the electrode structure","description":"An electrode structure of a back electrode including metal layers laminated in the following order: a Ti layer, a Ni layer, and a Ag alloy layer. The Ag alloy layer includes an Ag alloy and an additio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11501974","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11501974","citation_suggestion":"Patentable. \"Electrode structure of back electrode of semiconductor substrate, method for producing the same, and sputtering target for use in producing the electrode structure\" (US-11501974). https://patentable.app/patents/US-11501974","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11501974","json":"https://patentable.app/api/llm-context/US-11501974","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:36:37.361Z"}