{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11501979","patent":{"patent_number":"US-11501979","title":"Semiconductor device and method of producing a semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-06-17T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device and a method of producing the semiconductor device are described. The semiconductor device includes: a semiconductor substrate; a metallization layer over the semiconductor substrate; a plating over the metallization layer, the plating including NiP; a passivation over the metallization layer and laterally adjacent the plating such that a surface of the plating that faces away from the semiconductor substrate is uncovered by the passivation, wherein a seam is present along an interface between the passivation and the plating; and a structure that covers the seam along a periphery of the plating and delimits a bondable area for the plating. The structure extends from the periphery of the plating onto the passivation. The structure includes an imide having a curing temperature below a recrystallization temperature of the NiP or an oxide having a deposition temperature below the recrystallization temperature of the NiP."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of producing a semiconductor device","description":"A semiconductor device and a method of producing the semiconductor device are described. The semiconductor device includes: a semiconductor substrate; a metallization layer over the semiconductor subs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11501979","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11501979","citation_suggestion":"Patentable. \"Semiconductor device and method of producing a semiconductor device\" (US-11501979). https://patentable.app/patents/US-11501979","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11501979","json":"https://patentable.app/api/llm-context/US-11501979","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:09:12.814Z"}