{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11501999","patent":{"patent_number":"US-11501999","title":"Cobalt fill for gate structures","assignee":null,"inventors":[],"filing_date":"2019-07-30T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a gate structure includes forming a trench within an interlayer dielectric layer (ILD) that is disposed on a semiconductor substrate, the trench exposing a top surface of the semiconductor substrate, forming an interfacial layer at a bottom of the trench, forming a dielectric layer within the trench, forming a work function metal layer on the dielectric layer, forming an in-situ nitride layer on the work function metal layer in the trench, performing a first cobalt deposition process to form a cobalt layer within the trench, performing a second cobalt deposition process to increase a thickness of the cobalt layer within the trench, and performing an electrochemical plating (ECP) process to fill the trench with cobalt."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Cobalt fill for gate structures","description":"A method for forming a gate structure includes forming a trench within an interlayer dielectric layer (ILD) that is disposed on a semiconductor substrate, the trench exposing a top surface of the semi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11501999","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11501999","citation_suggestion":"Patentable. \"Cobalt fill for gate structures\" (US-11501999). https://patentable.app/patents/US-11501999","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11501999","json":"https://patentable.app/api/llm-context/US-11501999","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T23:15:23.781Z"}