{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502002","patent":{"patent_number":"US-11502002","title":"Method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2019-05-27T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"Provided is a method for manufacturing a semiconductor device suitable for achieving low wiring resistance between semiconductor elements that is bonded via an adhesive layer and multi-layered. The method according to the present invention is as follows. First, a wafer laminate (W) is prepared, the wafer laminate (W) including a wafer (10) having a circuit forming surface (10a), a wafer (20) having a main surface (20a) and a back surface (20b), and an adhesive layer (30) containing an SiOC-based polymer. Then, a hole (H) is formed in the wafer laminate (W) by etching the wafer laminate (W) from the wafer (20) side via a mask pattern masking a portion of the main surface (20a) side of the wafer (20), the hole (H) extending through the wafer (20) and the adhesive layer (30) and reaching a wiring pattern (12b) in the wafer (10). Then, an insulating film (41) is formed on an inner surface of the hole (H). Then, the insulating film (41) on a bottom surface of the hole (H) is removed. Then, the wafer laminate (W) is subjected to a cleaning treatment (an oxygen plasma treatment and/or an Ar sputtering treatment). Then, a conductive portion is formed in the hole (H)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device","description":"Provided is a method for manufacturing a semiconductor device suitable for achieving low wiring resistance between semiconductor elements that is bonded via an adhesive layer and multi-layered. The me","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502002","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502002","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device\" (US-11502002). https://patentable.app/patents/US-11502002","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502002","json":"https://patentable.app/api/llm-context/US-11502002","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:57:27.401Z"}