{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502005","patent":{"patent_number":"US-11502005","title":"Semiconductor devices and methods of forming the same","assignee":null,"inventors":[],"filing_date":"2020-12-09T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes providing a structure having first and second fins over a substrate and oriented lengthwise generally along a first direction and source/drain (S/D) features over the first and second fins; forming an interlayer dielectric (ILD) layer covering the S/D features; performing a first etching process at least to an area between the S/D features, thereby forming a trench in the ILD layer; depositing a dielectric material in the trench; performing a second etching process to selectively recess the dielectric material; and performing a third etching process to selectively recess the ILD layer, thereby forming a contact hole that exposes the S/D features."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices and methods of forming the same","description":"A method includes providing a structure having first and second fins over a substrate and oriented lengthwise generally along a first direction and source/drain (S/D) features over the first and secon","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502005","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502005","citation_suggestion":"Patentable. \"Semiconductor devices and methods of forming the same\" (US-11502005). https://patentable.app/patents/US-11502005","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502005","json":"https://patentable.app/api/llm-context/US-11502005","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:12:15.601Z"}