{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502038","patent":{"patent_number":"US-11502038","title":"Semiconductor structure having via through bonded wafers and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2020-08-03T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"The present disclosure provides a semiconductor structure having a first wafer including a first substrate, a first dielectric layer over the first substrate, and a first conductive pad surrounded by the first dielectric layer; a second wafer including a second dielectric layer, a second substrate over the second dielectric layer, and a second conductive pad surrounded by the second dielectric layer; a bonding dielectric disposed between the first dielectric layer and the second dielectric layer to bond the first dielectric layer with the second dielectric layer; and a conductive via extending from the first conductive pad and surrounded by the bonding dielectric, the second conductive pad and the second wafer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure having via through bonded wafers and manufacturing method thereof","description":"The present disclosure provides a semiconductor structure having a first wafer including a first substrate, a first dielectric layer over the first substrate, and a first conductive pad surrounded by ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502038","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502038","citation_suggestion":"Patentable. \"Semiconductor structure having via through bonded wafers and manufacturing method thereof\" (US-11502038). https://patentable.app/patents/US-11502038","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502038","json":"https://patentable.app/api/llm-context/US-11502038","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:24:46.084Z"}