{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502044","patent":{"patent_number":"US-11502044","title":"Methods of manufacturing semiconductor device and semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-06-30T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"In a method of manufacturing a semiconductor device, a first interlayer dielectric (ILD) layer is formed over a substrate, a CMP stop layer is formed over the first ILD layer, a trench opening is formed by patterning the CMP stop layer and the first ILD layer, an underlying first process mark is formed by forming a first conductive layer in the trench opening, a lower dielectric layer is formed over the underlying first process mark, a middle dielectric layer is formed over the lower dielectric layer, an upper dielectric layer is formed over the middle dielectric layer, a planarization operation is performed on the upper, middle and lower dielectric layers so that a part of the middle dielectric layer remains over the underlying first process mark, and a second process mark by the lower dielectric layer is formed by removing the remaining part of the middle dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of manufacturing semiconductor device and semiconductor device","description":"In a method of manufacturing a semiconductor device, a first interlayer dielectric (ILD) layer is formed over a substrate, a CMP stop layer is formed over the first ILD layer, a trench opening is form","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502044","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502044","citation_suggestion":"Patentable. \"Methods of manufacturing semiconductor device and semiconductor device\" (US-11502044). https://patentable.app/patents/US-11502044","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502044","json":"https://patentable.app/api/llm-context/US-11502044","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:46:45.805Z"}