{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502058","patent":{"patent_number":"US-11502058","title":"Hybrid wafer bonding method and structure thereof","assignee":null,"inventors":[],"filing_date":"2020-06-04T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A hybrid wafer bonding method includes providing a first semiconductor structure and providing a second semiconductor structure. The first semiconductor structure includes a first substrate, a first dielectric, and a first via structure. The first via structure includes a first contact via and first metal impurities doped in the first contact via. The second semiconductor structure includes a second substrate, a second dielectric layer, and a second via structure. The second via structure includes a second contact via and second metal impurities doped in the second contact via. The method further includes bonding the first semiconductor structure with the second semiconductor and forming a self-barrier layer by an alloying process. The self-barrier layer is formed by a multi-component oxide corresponding to the first and second metal impurities."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Hybrid wafer bonding method and structure thereof","description":"A hybrid wafer bonding method includes providing a first semiconductor structure and providing a second semiconductor structure. The first semiconductor structure includes a first substrate, a first d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502058","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502058","citation_suggestion":"Patentable. \"Hybrid wafer bonding method and structure thereof\" (US-11502058). https://patentable.app/patents/US-11502058","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502058","json":"https://patentable.app/api/llm-context/US-11502058","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:06:01.008Z"}