{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502068","patent":{"patent_number":"US-11502068","title":"Semiconductor device package having galvanic isolation and method therefor","assignee":null,"inventors":[],"filing_date":"2021-03-03T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device package having galvanic isolation is provided. The semiconductor device includes a package substrate having a first inductive coil formed from a first conductive layer and a second inductive coil formed from a second conductive layer. The first conductive layer and the second conductive layer are separated by a non-conductive material. A first semiconductor die is attached to a first major side of the package substrate. The first semiconductor die is conductively interconnected to the first inductive coil. A second semiconductor die is attached to the first major side of the package substrate. A first wireless communication link between the first semiconductor die and the second semiconductor die is formed by way of the first and second inductive coils."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device package having galvanic isolation and method therefor","description":"A semiconductor device package having galvanic isolation is provided. The semiconductor device includes a package substrate having a first inductive coil formed from a first conductive layer and a sec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502068","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502068","citation_suggestion":"Patentable. \"Semiconductor device package having galvanic isolation and method therefor\" (US-11502068). https://patentable.app/patents/US-11502068","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502068","json":"https://patentable.app/api/llm-context/US-11502068","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:52:24.764Z"}