{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502092","patent":{"patent_number":"US-11502092","title":"Semiconductor memory device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2020-06-09T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":34,"abstract":"A semiconductor memory device includes a stack structure including a plurality of first dielectric layers alternately stacked with a plurality of second dielectric layers over a first substrate in a coupling region, and including a plurality of electrode layers alternately stacked with the plurality of first dielectric layers over the first substrate outside the coupling region; and a plurality of vias passing through the stack structure in a first direction that is perpendicular to a top surface of the first substrate and disposed at edges of the coupling region to define an etch barrier. Each of the plurality of vias comprising: a pillar portion extending in the first direction; and a plurality of extended portions, extending radially from an outer circumference of the pillar portion and parallel to the top surface of the first substrate, that are coextensive in the first direction with the plurality of second dielectric layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device and method for manufacturing the same","description":"A semiconductor memory device includes a stack structure including a plurality of first dielectric layers alternately stacked with a plurality of second dielectric layers over a first substrate in a c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502092","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502092","citation_suggestion":"Patentable. \"Semiconductor memory device and method for manufacturing the same\" (US-11502092). https://patentable.app/patents/US-11502092","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502092","json":"https://patentable.app/api/llm-context/US-11502092","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:01:05.911Z"}