{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502096","patent":{"patent_number":"US-11502096","title":"Memory device capable of improving erase and program efficiency","assignee":null,"inventors":[],"filing_date":"2021-08-04T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","H02M","H02M"],"num_claims":14,"abstract":"A memory device includes a first well, a second well, a first active area, a second active area, a third active area, a first poly layer and a second poly layer. The first well is of a first conductivity type. The second well is of a second conductivity type different from the first conductivity type. The first active area is of the second conductivity type and is formed on the first well. The second active area is of the first conductivity type and is formed on the first well and between the first active area and the second well. The third active area is of the first conductivity type and is formed on the second well. The first poly layer is formed above the first well and the second well. The second poly layer is formed above the first well."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device capable of improving erase and program efficiency","description":"A memory device includes a first well, a second well, a first active area, a second active area, a third active area, a first poly layer and a second poly layer. The first well is of a first conductiv","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502096","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502096","citation_suggestion":"Patentable. \"Memory device capable of improving erase and program efficiency\" (US-11502096). https://patentable.app/patents/US-11502096","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502096","json":"https://patentable.app/api/llm-context/US-11502096","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:48:29.001Z"}