{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502102","patent":{"patent_number":"US-11502102","title":"Three-dimensional memory devices and fabrication methods thereof","assignee":null,"inventors":[],"filing_date":"2020-11-21T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Embodiments of a method for forming a three-dimensional (3D) memory device includes the following operations. First, a channel hole is formed in a stack structure of a plurality first layers and a plurality of second layers alternatingly arranged over a substrate. A semiconductor channel is formed by filling the channel hole with a channel-forming structure. The plurality of first layers is removed. A plurality of conductor layers is formed from the plurality of second layers. Further, a gate-to-gate dielectric layer is formed between the adjacent conductor layers, the gate-to-gate dielectric layer including at least one sub-layer of silicon oxynitride."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory devices and fabrication methods thereof","description":"Embodiments of a method for forming a three-dimensional (3D) memory device includes the following operations. First, a channel hole is formed in a stack structure of a plurality first layers and a plu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502102","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502102","citation_suggestion":"Patentable. \"Three-dimensional memory devices and fabrication methods thereof\" (US-11502102). https://patentable.app/patents/US-11502102","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502102","json":"https://patentable.app/api/llm-context/US-11502102","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:47:23.104Z"}