{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502103","patent":{"patent_number":"US-11502103","title":"Memory cell with a ferroelectric capacitor integrated with a transtor gate","assignee":null,"inventors":[],"filing_date":"2018-08-28T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":24,"abstract":"Described herein are ferroelectric (FE) memory cells that include transistors having gates with FE capacitors integrated therein. An example memory cell includes a transistor having a semiconductor channel material, a gate dielectric over the semiconductor material, a first conductor material over the gate dielectric, a FE material over the first conductor material, and a second conductor material over the FE material. The first and second conductor materials form, respectively, first and second capacitor electrodes of a capacitor, where the first and second capacitor electrodes are separated by the FE material (hence, a “FE capacitor”). Separating a FE material from a semiconductor channel material of a transistor with a layer of a gate dielectric and a layer of a first conductor material eliminates the FE-semiconductor interface that may cause endurance issues in some other FE memory cells."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory cell with a ferroelectric capacitor integrated with a transtor gate","description":"Described herein are ferroelectric (FE) memory cells that include transistors having gates with FE capacitors integrated therein. An example memory cell includes a transistor having a semiconductor ch","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502103","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502103","citation_suggestion":"Patentable. \"Memory cell with a ferroelectric capacitor integrated with a transtor gate\" (US-11502103). https://patentable.app/patents/US-11502103","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502103","json":"https://patentable.app/api/llm-context/US-11502103","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:30:14.064Z"}