{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502105","patent":{"patent_number":"US-11502105","title":"Semiconductor structure and a method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2021-04-06T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":18,"abstract":"A semiconductor structure and a method for manufacturing the same are provided. The method includes: forming a silicide layer, forming a vertical Si channel layer, wherein the vertical Si channel layer is on an upper surface of the silicide layer, the vertical Si channel layer has a first silicon phase; performing a first annealing step so as to move the silicide layer upward and change a solid phase of the vertical Si channel layer from the first silicon phase to a second silicon phase at an interface of the silicide layer and the vertical Si channel layer, wherein the second silicon phase has a conductivity higher than a conductivity of the first silicon phase."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and a method for manufacturing the same","description":"A semiconductor structure and a method for manufacturing the same are provided. The method includes: forming a silicide layer, forming a vertical Si channel layer, wherein the vertical Si channel laye","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502105","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502105","citation_suggestion":"Patentable. \"Semiconductor structure and a method for manufacturing the same\" (US-11502105). https://patentable.app/patents/US-11502105","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502105","json":"https://patentable.app/api/llm-context/US-11502105","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:37:53.183Z"}