{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502164","patent":{"patent_number":"US-11502164","title":"Method of manufacturing semiconductor integrated circuit","assignee":null,"inventors":[],"filing_date":"2021-01-05T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":6,"abstract":"A method of manufacturing a semiconductor integrated circuit includes forming a body region having a second conductivity type in an upper portion of a support layer having a first conductivity type and forming a well region having a second conductivity type in an upper portion of the support layer. An output side buried layer is formed inside the body region and a circuit side buried layer is formed inside the well region. A trench is dug to penetrate through the body region and a control electrode structure is buried in the gate trench. First and second terminal regions are formed on the well region and an output terminal region is formed on the body region. An output stage element having the output terminal region is controlled by a circuit element including the first and second terminal regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor integrated circuit","description":"A method of manufacturing a semiconductor integrated circuit includes forming a body region having a second conductivity type in an upper portion of a support layer having a first conductivity type an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502164","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502164","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor integrated circuit\" (US-11502164). https://patentable.app/patents/US-11502164","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502164","json":"https://patentable.app/api/llm-context/US-11502164","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:22:08.361Z"}