{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502165","patent":{"patent_number":"US-11502165","title":"Semiconductor device with flowable layer and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2020-07-08T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first isolation layer positioned in the substrate, a first treated flowable layer positioned between the first isolation layer and the substrate, a second isolation layer positioned in the substrate, and a second treated flowable layer positioned between the second isolation layer and the substrate. A width of the first isolation layer is greater than a width of the second isolation layer, and a depth of the first isolation layer is less than a depth of the second isolation layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with flowable layer and method for fabricating the same","description":"The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first isolation layer positioned in the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502165","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502165","citation_suggestion":"Patentable. \"Semiconductor device with flowable layer and method for fabricating the same\" (US-11502165). https://patentable.app/patents/US-11502165","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502165","json":"https://patentable.app/api/llm-context/US-11502165","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T22:31:25.849Z"}