{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502168","patent":{"patent_number":"US-11502168","title":"Tuning threshold voltage in nanosheet transitor devices","assignee":null,"inventors":[],"filing_date":"2020-03-16T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","B82Y"],"num_claims":20,"abstract":"In some embodiments, the present disclosure relates to an integrated chip that includes a first nanosheet field effect transistor (NSFET). The first NSFET includes a first nanosheet channel structure arranged over a substrate, a second nanosheet channel structure arranged directly over the first nanosheet channel structure, and a first gate electrode structure. The first and second nanosheet channel structures extend in parallel between first and second source/drain regions. The first gate electrode structure includes a first conductive ring and a second conductive ring that completely surround outer sidewalls of the first nanosheet channel structure and the second nanosheet channel structure, respectively, and that comprise a first material. The first gate electrode structure also includes a passivation layer that completely surrounds the first and second conductive rings, is arranged directly between the first and second nanosheet channel structures, and comprises a second material different than the first material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Tuning threshold voltage in nanosheet transitor devices","description":"In some embodiments, the present disclosure relates to an integrated chip that includes a first nanosheet field effect transistor (NSFET). The first NSFET includes a first nanosheet channel structure ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502168","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502168","citation_suggestion":"Patentable. \"Tuning threshold voltage in nanosheet transitor devices\" (US-11502168). https://patentable.app/patents/US-11502168","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502168","json":"https://patentable.app/api/llm-context/US-11502168","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:05:07.284Z"}