{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502172","patent":{"patent_number":"US-11502172","title":"Semiconductor device with carbon-density-decreasing region","assignee":null,"inventors":[],"filing_date":"2019-01-10T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"A semiconductor device includes a SiC semiconductor layer that has a carbon density of 1.0×1022 cm−3 or more, a SiO2 layer that is formed on the SiC semiconductor layer and that has a connection surface contiguous to the SiC semiconductor layer and a non-connection surface positioned on a side opposite to the connection surface, a carbon-density-decreasing region that is formed at a surface layer portion of the connection surface of the SiO2 layer and in which a carbon density gradually decreases toward the non-connection surface of the SiO2 layer, and a low carbon density region that is formed at a surface layer portion of the non-connection surface of the SiO2 layer and that has a carbon density of 1.0×1019 cm−3 or less."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with carbon-density-decreasing region","description":"A semiconductor device includes a SiC semiconductor layer that has a carbon density of 1.0×1022 cm−3 or more, a SiO2 layer that is formed on the SiC semiconductor layer and that has a connection surfa","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502172","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502172","citation_suggestion":"Patentable. \"Semiconductor device with carbon-density-decreasing region\" (US-11502172). https://patentable.app/patents/US-11502172","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502172","json":"https://patentable.app/api/llm-context/US-11502172","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:37:45.692Z"}