{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502179","patent":{"patent_number":"US-11502179","title":"Integrated assemblies containing ferroelectric transistors, and methods of forming integrated assemblies","assignee":null,"inventors":[],"filing_date":"2020-08-24T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["G06F","G06F","G06F","G06F","G06F","G06F","G06F","G06Q","H04L","H04N","H04N","G06F","G06F","G06F","G06F","G11B","H04N","H04N"],"num_claims":26,"abstract":"Some embodiments include a ferroelectric transistor having an active region which includes a first source/drain region, a second source/drain region vertically offset from the first source/drain region, and a channel region between the first and second source/drain regions. A first conductive gate is operatively adjacent to the channel region of the active region. Insulative material is between the first conductive gate and the channel region. A second conductive gate is adjacent to the first conductive gate. Ferroelectric material is between the first and second conductive gates. Some embodiments include integrated memory. Some embodiments include methods of forming integrated assemblies."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated assemblies containing ferroelectric transistors, and methods of forming integrated assemblies","description":"Some embodiments include a ferroelectric transistor having an active region which includes a first source/drain region, a second source/drain region vertically offset from the first source/drain regio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502179","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502179","citation_suggestion":"Patentable. \"Integrated assemblies containing ferroelectric transistors, and methods of forming integrated assemblies\" (US-11502179). https://patentable.app/patents/US-11502179","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502179","json":"https://patentable.app/api/llm-context/US-11502179","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:24:33.954Z"}