{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502184","patent":{"patent_number":"US-11502184","title":"Semiconductor device with spacer of gradually changed thickness and manufacturing method thereof, and electronic device including the semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-12-04T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":15,"abstract":"The present disclosure provides a semiconductor device and a manufacturing method thereof, and an electronic device including the semiconductor device. The semiconductor device includes: a substrate; an active region including a first source/drain region, a channel region and a second source/drain region stacked sequentially on the substrate and adjacent to each other; a gate stack formed around an outer periphery of the channel region; and spacers formed around the outer periphery of the channel region, respectively between the gate stack and the first source/drain region and between the gate stack and the second source/drain region; wherein the spacers each have a thickness varying in a direction parallel to a top surface of the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with spacer of gradually changed thickness and manufacturing method thereof, and electronic device including the semiconductor device","description":"The present disclosure provides a semiconductor device and a manufacturing method thereof, and an electronic device including the semiconductor device. The semiconductor device includes: a substrate; ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502184","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502184","citation_suggestion":"Patentable. \"Semiconductor device with spacer of gradually changed thickness and manufacturing method thereof, and electronic device including the semiconductor device\" (US-11502184). https://patentable.app/patents/US-11502184","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502184","json":"https://patentable.app/api/llm-context/US-11502184","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:25:35.808Z"}