{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502190","patent":{"patent_number":"US-11502190","title":"Vertical power semiconductor device, semiconductor wafer or bare-die arrangement, carrier, and method of manufacturing a vertical power semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-11-20T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":28,"abstract":"A vertical power semiconductor device is described. The vertical power semiconductor device includes a semiconductor body having a first main surface and a second main surface opposite to the first main surface. A thickness of the semiconductor body between the first main surface and the second main surface ranges from 40 μm to 200 μm. Active device elements are formed in the semiconductor body at the first main surface. Edge termination elements at least partly surround the active device elements at the first main surface. A diffusion region extends into the semiconductor body from the second main surface. A doping concentration profile of the diffusion region decreases from a peak concentration Ns at the second main surface to a concentration Ns/e, e being Euler's number, over a vertical distance ranging from 1 μm to 5 μm."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical power semiconductor device, semiconductor wafer or bare-die arrangement, carrier, and method of manufacturing a vertical power semiconductor device","description":"A vertical power semiconductor device is described. The vertical power semiconductor device includes a semiconductor body having a first main surface and a second main surface opposite to the first ma","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502190","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502190","citation_suggestion":"Patentable. \"Vertical power semiconductor device, semiconductor wafer or bare-die arrangement, carrier, and method of manufacturing a vertical power semiconductor device\" (US-11502190). https://patentable.app/patents/US-11502190","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502190","json":"https://patentable.app/api/llm-context/US-11502190","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:37:28.039Z"}