{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502191","patent":{"patent_number":"US-11502191","title":"Transistors with backside field plate structures","assignee":null,"inventors":[],"filing_date":"2019-02-14T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Disclosed herein are IC structures that implement field plates for III-N transistors in a form of electrically conductive structures provided in a III-N semiconductor material below the polarization layer (i.e., at the “backside” of an IC structure). In some embodiments, such a field plate may be implemented as a through-silicon via (TSV) extending from the back/bottom face of the substrate towards the III-N semiconductor material. Implementing field plates at the backside may provide a viable approach to changing the distribution of electric field at a transistor drain and increasing the breakdown voltage of an III-N transistor without incurring the large parasitic capacitances associated with the use of metal field plates provided above the polarization material. In addition, backside field plates may serve as a back barrier for advantageously reducing drain-induced barrier lowering."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistors with backside field plate structures","description":"Disclosed herein are IC structures that implement field plates for III-N transistors in a form of electrically conductive structures provided in a III-N semiconductor material below the polarization l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502191","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502191","citation_suggestion":"Patentable. \"Transistors with backside field plate structures\" (US-11502191). https://patentable.app/patents/US-11502191","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502191","json":"https://patentable.app/api/llm-context/US-11502191","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:12:31.888Z"}