{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502202","patent":{"patent_number":"US-11502202","title":"Transistors with uniform source/drain epitaxy","assignee":null,"inventors":[],"filing_date":"2020-12-23T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor device includes forming a plurality of semiconductor layers on a semiconductor substrate, and forming a plurality of gate structures spaced apart from each other on the semiconductor layers. The semiconductor layers are patterned into a plurality of patterned stacks spaced apart from each other, wherein the plurality of patterned stacks are under the plurality of gate structures. The method also includes forming a plurality of sacrificial spacers on lateral sides of the plurality of gate structures, and growing a plurality of source/drain regions. The source/drain regions are adjacent the patterned stacks and include a plurality of pillar portions formed on lateral sides of the sacrificial spacers. The sacrificial spacers and the plurality of pillar portions are removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistors with uniform source/drain epitaxy","description":"A method for manufacturing a semiconductor device includes forming a plurality of semiconductor layers on a semiconductor substrate, and forming a plurality of gate structures spaced apart from each o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502202","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502202","citation_suggestion":"Patentable. \"Transistors with uniform source/drain epitaxy\" (US-11502202). https://patentable.app/patents/US-11502202","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502202","json":"https://patentable.app/api/llm-context/US-11502202","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:14:19.374Z"}