{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502245","patent":{"patent_number":"US-11502245","title":"Magnetoresistive random access memory cell and fabricating the same","assignee":null,"inventors":[],"filing_date":"2020-05-04T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"A method of fabricating a semiconductor device includes forming a stack of film comprising an anti-ferromagnetic layer, the pin layer, a barrier layer, a free layer and a bottom electrode layer. The method also includes forming a first patterned hard mask over the anti-ferromagnetic layer, etching the anti-ferromagnetic layer and the pin layer by using the first patterned hard mask as a first etch mask, forming a first capping layer along sidewalls of the anti-ferromagnetic layer and the pin layer, etching the barrier layer and the free layer by using first patterned hard mask and the first capping layer as a second etch mask, forming a second capping layer over the first capping layer and extending along sidewalls of the barrier layer and the free layer, exposing the anti-ferromagnetic layer and forming a top electrode layer over the exposed anti-ferromagnetic layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetoresistive random access memory cell and fabricating the same","description":"A method of fabricating a semiconductor device includes forming a stack of film comprising an anti-ferromagnetic layer, the pin layer, a barrier layer, a free layer and a bottom electrode layer. The m","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502245","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502245","citation_suggestion":"Patentable. \"Magnetoresistive random access memory cell and fabricating the same\" (US-11502245). https://patentable.app/patents/US-11502245","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502245","json":"https://patentable.app/api/llm-context/US-11502245","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:23:08.983Z"}