{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11502246","patent":{"patent_number":"US-11502246","title":"Magnetoresistive device, magnetic memory, and method of fabricating a magnetoresistive device","assignee":null,"inventors":[],"filing_date":"2021-05-23T00:00:00.000Z","publication_date":"2022-11-15T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"A magnetoresistive device includes a spin-orbit-torque (SOT) electrode layer, and a first magnetic layer, a first non-magnetic layer, and a second magnetic layer sequentially stacked over the SOT electrode layer. An interface layer is located between the SOT electrode layer and the first magnetic layer, and an etch stop layer covers a surface portion of the SOT electrode layer and is located adjacent the interface layer. The interface layer includes a metal having a spin diffusion length that is greater than a thickness of the interface layer, and the etch stop layer includes an oxide or nitride material of the metal."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetoresistive device, magnetic memory, and method of fabricating a magnetoresistive device","description":"A magnetoresistive device includes a spin-orbit-torque (SOT) electrode layer, and a first magnetic layer, a first non-magnetic layer, and a second magnetic layer sequentially stacked over the SOT elec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11502246","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11502246","citation_suggestion":"Patentable. \"Magnetoresistive device, magnetic memory, and method of fabricating a magnetoresistive device\" (US-11502246). https://patentable.app/patents/US-11502246","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11502246","json":"https://patentable.app/api/llm-context/US-11502246","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:59:25.978Z"}