{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11506980","patent":{"patent_number":"US-11506980","title":"Resist underlayer film forming composition using a fluorene compound","assignee":null,"inventors":[],"filing_date":"2018-04-20T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; X1 represents —N(R1)—; X2 represents —N(R2)—; X3 represents —CH(R3)—; X4 represents —CH(R4)— etc.; R1, R2, R3, and R4 represent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R5, R6, R9, and R10 represent hydrogen atoms, hydroxy groups, alkyl groups, etc.; R7 and R8 represent benzene rings or naphthalene rings; and n and o are 0 or 1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Resist underlayer film forming composition using a fluorene compound","description":"Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist und","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11506980","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11506980","citation_suggestion":"Patentable. \"Resist underlayer film forming composition using a fluorene compound\" (US-11506980). https://patentable.app/patents/US-11506980","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11506980","json":"https://patentable.app/api/llm-context/US-11506980","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:36:08.954Z"}