{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11506981","patent":{"patent_number":"US-11506981","title":"Photoresist pattern trimming compositions and pattern formation methods","assignee":null,"inventors":[],"filing_date":"2020-05-12T00:00:00.000Z","publication_date":"2022-11-22T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":16,"abstract":"Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices. "},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Photoresist pattern trimming compositions and pattern formation methods","description":"Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11506981","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11506981","citation_suggestion":"Patentable. \"Photoresist pattern trimming compositions and pattern formation methods\" (US-11506981). https://patentable.app/patents/US-11506981","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11506981","json":"https://patentable.app/api/llm-context/US-11506981","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:36:43.279Z"}